INFINEON Semiconductors - Discretes

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRFB3207PBF
IRFB3207PBF - Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm, TO-220AB, Through Hole

9052070

Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm, TO-220AB, Through Hole

INFINEON

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N Channel 75V 180A 0.0036ohm TO-220AB Through Hole 10V 4V 330W 3Pins 175°C - -
IPP041N04NGXKSA1
IPP041N04NGXKSA1 - Power MOSFET, N Channel, 40 V, 80 A, 0.0033 ohm, TO-220, Through Hole

1775620

Power MOSFET, N Channel, 40 V, 80 A, 0.0033 ohm, TO-220, Through Hole

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N Channel 40V 80A 0.0033ohm TO-220 Through Hole 10V 2V 94W 3Pins 175°C - -
BAS16E6433HTMA1
BAS16E6433HTMA1 - Small Signal Diode, Single, 80 V, 250 mA, 1.25 V, 4 ns, 4.5 A

2443486

Small Signal Diode, Single, 80 V, 250 mA, 1.25 V, 4 ns, 4.5 A

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- - - - - - - - - 3Pins 150°C BAS16 AEC-Q101
BFP740ESDH6327XTSA1
BFP740ESDH6327XTSA1 - Bipolar - RF Transistor, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, SOT-343

2432736

Bipolar - RF Transistor, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, SOT-343

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- - - - SOT-343 Surface Mount - - 160mW 4Pins 150°C - AEC-Q101
BFR182WH6327XTSA1
BFR182WH6327XTSA1 - Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-323

2480679

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-323

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- - - - SOT-323 Surface Mount - - 250mW 3Pins 150°C - -
IRLR4132TRPBF
IRLR4132TRPBF - Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-252 (DPAK), Surface Mount

2726020

Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-252 (DPAK), Surface Mount

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N Channel 30V 78A 0.0025ohm TO-252 (DPAK) Surface Mount 10V 2.35V 140W 3Pins 175°C HEXFET -
BSC0910NDIATMA1
BSC0910NDIATMA1 - Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 0.0035 ohm

2839431

Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 0.0035 ohm

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N Channel - - - TISON - - - - 8Pins 150°C OptiMOS Series -
IM564X6DXKMA1
IM564X6DXKMA1 - Intelligent Power Module (IPM), IGBT, MOSFET, 600 V, 20 A, 2 kV, DIP, CIPOS Mini

3373686

Intelligent Power Module (IPM), IGBT, MOSFET, 600 V, 20 A, 2 kV, DIP, CIPOS Mini

INFINEON

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- - - - - - - - - - - CIPOS Mini -
AIKB20N60CTATMA1
AIKB20N60CTATMA1 - IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263 (D2PAK), 3 Pins

2986332

IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263 (D2PAK), 3 Pins

INFINEON

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- - - - TO-263 (D2PAK) Surface Mount - - 156W 3Pins 150°C TRENCHSTOP -
IPN70R600P7SATMA1
IPN70R600P7SATMA1 - Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

2986474

Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

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N Channel 700V 8.5A 0.49ohm SOT-223 Surface Mount 10V 3V 6.9W 3Pins 150°C CoolMOS P7 -
IRFP1405PBF
IRFP1405PBF - Power MOSFET, N Channel, 55 V, 160 A, 0.0053 ohm, TO-247AC, Through Hole

8658382

Power MOSFET, N Channel, 55 V, 160 A, 0.0053 ohm, TO-247AC, Through Hole

INFINEON

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N Channel 55V 160A 0.0053ohm TO-247AC Through Hole 10V 4V 310W 3Pins 175°C - -
IRFB7530PBF
IRFB7530PBF - Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-220AB, Through Hole

2406514

Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-220AB, Through Hole

INFINEON

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N Channel 60V 195A 0.002ohm TO-220AB Through Hole 10V 3.7V 375W 3Pins 175°C StrongIRFET HEXFET Series -
IRFS7534TRLPBF
IRFS7534TRLPBF - Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-263AB, Surface Mount

2406526

Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-263AB, Surface Mount

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N Channel 60V 195A 0.002ohm TO-263AB Surface Mount 10V 3.7V 294W 3Pins 175°C - -
BFR840L3RHESDE6327XTSA1
BFR840L3RHESDE6327XTSA1 - Bipolar - RF Transistor, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, TSLP

2480687

Bipolar - RF Transistor, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, TSLP

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- - - - TSLP Surface Mount - - 75mW 3Pins 150°C - -
BAV170E6327HTSA1
BAV170E6327HTSA1 - RF / Pin Diode, Dual Common Cathode, 80 V, SOT-23, 3 Pin, 2 pF

2443507

RF / Pin Diode, Dual Common Cathode, 80 V, SOT-23, 3 Pin, 2 pF

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- - - - - - - - 250mW - 150°C BAV17 -
IRFB7537PBF
IRFB7537PBF - Power MOSFET, N Channel, 60 V, 173 A, 0.00275 ohm, TO-220AB, Through Hole

2406516

Power MOSFET, N Channel, 60 V, 173 A, 0.00275 ohm, TO-220AB, Through Hole

INFINEON

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N Channel 60V 173A 0.00275ohm TO-220AB Through Hole 10V 3.7V 230W 3Pins 175°C - -
BFR340FH6327XTSA1
BFR340FH6327XTSA1 - Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

2480680

Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

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- - - - TSFP Surface Mount - - 75mW 3Pins 150°C - -
IKCM10H60GAXKMA1
IKCM10H60GAXKMA1 - Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/10A/6 Outputs, SIP-24

2781279

Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/10A/6 Outputs, SIP-24

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- - - - - - - - - - - CIPOS Mini -
IDM08G120C5XTMA1
IDM08G120C5XTMA1 - Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 27 A, 28 nC, TO-252 (DPAK)

2780806

Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 27 A, 28 nC, TO-252 (DPAK)

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- - - - - - - - - - 175°C thinQ 5G 1200V -
IGCM20F60GAXKMA1
IGCM20F60GAXKMA1 - Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/20A/6 Outputs, DIP-24

2762333

Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/20A/6 Outputs, DIP-24

INFINEON

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- - - - - - - - - - - CIPOS Mini -
BAT5405E6327HTSA1
BAT5405E6327HTSA1 - Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 800 mV, 600 mA, 150 °C

2725759

Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 800 mV, 600 mA, 150 °C

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- - - - - - - - - 3Pins 150°C BAT54 AEC-Q101
IPP086N10N3GXKSA1
IPP086N10N3GXKSA1 - Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-220, Through Hole

2709893

Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-220, Through Hole

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N Channel 100V 80A 0.0074ohm TO-220 Through Hole 10V 2.7V 125W 3Pins 175°C OptiMOS 3 -
IRLU3636PBF
IRLU3636PBF - Power MOSFET, N Channel, 60 V, 50 A, 0.0054 ohm, TO-251AA, Through Hole

2781157

Power MOSFET, N Channel, 60 V, 50 A, 0.0054 ohm, TO-251AA, Through Hole

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N Channel 60V 50A 0.0054ohm TO-251AA Through Hole 10V 2.5V 143W 3Pins 175°C HEXFET -
BF2040E6814HTSA1
BF2040E6814HTSA1 - RF FET Transistor, 8 V, 40 mA, 200 mW, SOT-143

2709855

RF FET Transistor, 8 V, 40 mA, 200 mW, SOT-143

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N Channel 8V 40mA - SOT-143 Surface Mount - - 200mW 4Pins 150°C BF2040 -
IRF6775MTRPBF
IRF6775MTRPBF - Power MOSFET, N Channel, 150 V, 28 A, 0.047 ohm, DirectFET MZ, Surface Mount

2725895

Power MOSFET, N Channel, 150 V, 28 A, 0.047 ohm, DirectFET MZ, Surface Mount

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N Channel 150V 28A 0.047ohm DirectFET MZ Surface Mount 10V 5V 89W 7Pins 150°C HEXFET -