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RJH65T46DPQ-A0#T0
IGBT, 80 A, 1.8 V, 340.9 W, 650 V, TO-247A, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price (ex VAT) |
|---|---|
| 500+ | £5.690 |
Price for:Each
Minimum: 500
Multiple: 500
£2,845.00 (ex VAT)
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Product Information
ManufacturerRENESAS
Manufacturer Part NoRJH65T46DPQ-A0#T0
Order Code4307312
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.8V
Power Dissipation340.9W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247A
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Continuous Collector Current
80A
Power Dissipation
340.9W
Transistor Case Style
TO-247A
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability