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ROHM BSM400D12P2G003

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module

ROHM BSM400D12P2G003
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Manufacturer:
ROHM ROHM
Manufacturer Part No:
BSM400D12P2G003
Order Code:
3573228
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Technical Datasheet:
BSM400D12P2G003   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Overview

BSM400D12P2G003 is a SiC power module. This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD. Application includes motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
  • Low surge, low switching loss, high-speed switching possible
  • Reduced temperature dependence
  • 2.3V on-state static drain-source voltage (typ, Tj=25°C, ID=400A, VGS=18V)
  • 397A drain current (DC(Tc=60°C) VGS=18V)
  • 4mA drain cut-off current (max, VDS=1200V, VGS=0V, Tj=25°C)
  • 1.8V source-drain voltage (typ, VGS=0V, IS=400A, Tj=25°C)
  • 38nF input capacitance (typ, VDS=10V, VGS=0V,200KHz, Tj=25°C)
  • 2500Vrms isolation voltage (terminals to baseplate f = 60Hz AC 1 min, Tj = 25°C)
  • Junction temperature range from -40 to 150°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
Half Bridge

:
Dual N Channel

:
400A

:
1.2kV

:
-

:
Module

:
-

:
-

:
4V

:
2.45kW

:
150°C

:
-

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Technical Documents (1)

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Standard lead time for this product is 25 weeks.

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Same day despatch

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

£1,209.00

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