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GNP2070TD-ZTR
Gallium Nitride (GaN) Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | £8.420 |
| 50+ | £7.930 |
| 100+ | £7.440 |
| 250+ | £7.290 |
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£87.70 (ex VAT)
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Product Overview
GNP2070TD-ZTR is a EcoGaN™, E-mode Gallium-Nitride(GaN) HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. The ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting. Typical applications include high switching frequency converter, high density converter.
- Continuous drain to source voltage is 650V
- Transient drain to source voltage is 800V
- Continuous drain current is 26.6A at Tc = 25°C
- Pulse drain current is 53.2A at Tc = 25°C
- Gate threshold voltage is 1.5V typ at VDS = 50mV, ID = 18mA
- Static drain to source on state resistance is 73mohm typ at VGS = 5.0V, ID = 8A, Tj = 25°C
- Total gate charge is 4.7nC typ at VDS = 400V, ID = 8A, VGS = 6V / 0V
- Power dissipation is 159W at Tc = 25°C
- TOLL-8N package
- Operation temperature range from -55 to 150°C
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.098ohm
No. of Pins
8Pins
Continuous Drain Current Id
27A
Typical Gate Charge
5.2nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability